carborun Price — China Factory EXW 2026

carborun price Spec: China national standards

China EXW, VAT excluded

Newest China EXW USD 1,212.39 / MT · VAT excluded -60.0531 (-5.00%) as of 20210323

Newest Price 1,212.39

Price Date 20210323

Day's Change -60.05

Day's Range 1,212.39 - 1,152.34

Month's Change -464.11

Month's Range 1,212.39 - 748.28

Year's Change +169.32

Year's Range 1,212.39 - 1,043.07

A subtle but critical reliability point: SiC's gate oxide fails differently from silicon's. In Si MOSFETs, the silicon itself breaks down before the oxide, so blocking-mode oxide s...

Also known as Silicon Carbide (Black), CARBORUNDUM BOILING CHIPS 14 MESH, CARBORUNDUM BOILING CHIPS 20 MESH, CARBORUNDUM BOILING CHIPS 4 MESH

Opinions

What are the key engineering pitfalls when designing with SiC MOSFETs?

A subtle but critical reliability point: SiC's gate oxide fails differently from silicon's. In Si MOSFETs, the silicon itself breaks down before the oxide, so blocking-mode oxide stability needs no extra testing. In SiC, the oxide sees up to 10 times higher electric field and can fail first, so qualification must include blocking-mode stress tests. Buyers should verify suppliers run these additional reliability screens, not just standard silicon-era tests.

How does silicon carbide MOSFET adoption benefit electric vehicles in real system terms?

The system-level economics also hold at low switching frequencies. In STATCOM and HVDC applications running near 300 Hz, SiC modules still beat Si IGBTs on losses across all load and temperature conditions. The extra upfront cost of SiC can be recovered in 1-3.5 years, and under ideal load profiles and electricity tariffs, payback can fall below one year. That broadens the addressable market well beyond EVs.

Why is China undercutting European and US silicon carbide wafer costs by nearly three times?

The 8-inch transition will widen this gap further. Moving from 6-inch to 8-inch raises output per wafer by roughly 60% and cuts cost per die by 30-40%. Chinese leader Tianyu Advanced already claims over 75% yield on 8-inch and sells at about RMB 5,200 per wafer with margin, while some overseas rivals are locked into long-term contracts near RMB 70,000. Buyers should watch 2025-2026 as the window when 8-inch becomes the battleground.

carborun price context

What drives carborun prices

What are the key engineering pitfalls when designing with SiC MOSFETs?: A subtle but critical reliability point: SiC's gate oxide fails differently from silicon's. In Si MOSFETs, the silicon itself breaks down before the oxide, so b...

How does silicon carbide MOSFET adoption benefit electric vehicles in real system terms?: The system-level economics also hold at low switching frequencies. In STATCOM and HVDC applications running near 300 Hz, SiC modules still beat Si IGBTs on loss...

How we assess carborun price

China factory / mainstream market EXW quotes (VAT excluded where shown) - not a single global public index

Regional and specification detail so buyers can compare like-for-like grades

Landed cost figures from our calculator are planning estimates, not a customs ruling

Overview

Silicon carbide (black, SiC, CAS 409-21-2) is a high-hardness, high-thermal-conductivity compound semiconductor with a density of 3.22 g/mL, a melting point of 2700 °C, and insolubility in water. It is a key third-generation semiconductor material replacing silicon in high-power, high-voltage, and high-temperature applications.

Power electronics: enables high-voltage (1200V+) unipolar devices like MOSFETs, reducing switching losses and improving system efficiency.
Electric vehicles: boosts inverter efficiency, cuts battery discharge by ~9%, and extends vehicle range by 15–20%.
Industrial & grid: lowers losses in STATCOM, MMC, and HVDC systems, with payback periods of 1–3.5 years versus Si IGBTs.
Renewables & infrastructure: critical for photovoltaic inverters, 5G base stations, and data-center power supplies.

China is transitioning from 6-inch to 8-inch substrates, with 8-inch share expected to exceed 20% by 2030. Conductive-type substrates dominate (~75% of market), driven by EV demand. The industry faced a 2025 price war from overcapacity, but prices are stabilizing; substrate costs remain several times higher than silicon.

Key domestic producers:
Tianyu Advanced (天岳先进) – global leader in conductive and 8-inch substrates.
SICC (山东天岳) – major substrate manufacturer.
TankeBlue (天科合达) – established SiC substrate supplier.
SemiX (芯联集成) – high-voltage SiC MOSFET devices and modules.

Properties

Name

carborun

Silicon Carbide (Black)

CARBORUNDUM BOILING CHIPS 14 MESH

CARBORUNDUM BOILING CHIPS 20 MESH

CARBORUNDUM BOILING CHIPS 4 MESH

CAS Number

409-21-2

EINECS No.

206-991-8

Risk Codes

S26;S36

Safety Description

36/37/38

HS Code

2849200000

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carborun price Spec: China national standards

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